Material effects on the ammonothermal crystallization of bulk GaN
Advancing the chemical engineering fundamentals
Crystallization (T2-9P)
Keywords: GaN, gallium nitride, ammonothermal, bulk crystal growth, supercritical ammonia
Gallium nitride is an essential material for the semiconductor industry, e.g. for laser diodes. Up to now single crystals can not be grown in an adequate size and quality for industrial scale production. A promising method for growing such bulk crystals is the ammonothermal process. Due to the extreme reaction conditions at high pressure and temperature in a supercritical ammonia atmosphere, the requirements of the materials are extensive. Especially chemical resistance behaviour of the materials used is important to prevent contaminations in the grown crystals. For this reason different metals and ceramics were investigated for applicability in the ammonothermal process. Catalytic effects on crystal growth, contamination of the crystals, and chemical behaviour of these materials were examined by microscopy, SEM, and EDX measurements. Evaluation of these results allows the improvement of crystallizers and consequently the quality of the produced crystals.
Presented Wednesday 19, 13:30 to 15:00, in session Crystallization (T2-9P).
