Electronics and Photonics | |||
| Session 658 - Chemical Vapor Deposition I | |||
| We invite papers that present recent advances in Chemical Vapor Deposition (CVD). Topics traditionally covered in this session include: CVD reactor diagnostics and modeling, scale-up issues, equipment development, novel deposition precursors, precursor delivery systems, sensors and process control, gas-phase and surface chemical reaction mechanisms, kinetics, chemically reacting flow simulations, nucleation and growth models. Applications to microelectronics, optoelectronics, thin-film coatings, synthesis of nanowires & nanotubes, and new-material development are welcome. Papers illustrating non-traditional applications of Chemical Engineering to CVD research, materials processing and advances in chemical engineering science through CVD research are especially encouraged. | |||
| Chair: | Daniel D. Burkey | ||
| CoChair: | Brian G. Willis | ||
| CoSponsor(s): | Interfacial Phenomena | ||
| 658a | Knudsen Permeability of Fibrous Films Xiangning Li, William Strieder | ||
| 658b | Generalized Design Criteria for Vertical Chemical Vapor Deposition Reactors Joungmo Cho, T. J. Mountziaris | ||
| 658c | Growth and Characterization of Sic Films Deposited in a Large-Scale Lpcvd Reactor Christopher S. Roper, Roger T. Howe, Roya Maboudian | ||
| 658d | Chemical Vapor Deposition Growth and Characterization of Amorphous, Phosphorous-Doped Ruthenium Films John G. Ekerdt, Jihnhong Shin, Lucas B. Henderson, Wyatt Winkenwerder, Abdul Waheed, Richard A. Jones | ||
| 658e | Rapid Synthesis of Dielectric Films by Microwave Assisted Cvd Nicholas Ndiege, Vaidyanathan Subramanian, Mark A. Shannon, Richard I. Masel | ||
| 658f | Metalorganic Chemical Vapor Deposition of Ingaasn Using Dilute Nitrogen Trifluoride and Tertiarybutylarsine S. F. Cheng, R. L. Woo, A. M. Noori, G. Malouf, M. S. Goorsky, R. F. Hicks | ||
| 658g | Mocvd Heterostructures of Tio2 and Al2o3 Using Cycling of Tdeat, Tma and O2 Xuemei Song, Christos G. Takoudis | ||
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