The demand for faster integrated circuit performance continues to lead to shrinking transistor feature sizes. The technology roadmaps predict that the thickness of the SiO₂ gate dielectric needs to be scaled down to sub-2 nm for sub-0.1 mm complementary metal oxide semiconductors. Therefore, the concerns regarding high tunneling leakage current and low gate capacitance of ultrathin SiO₂ lead to the exploration of alternative dielectric materials with higher permittivity. Among these candidates, aluminum oxide (Al₂O₃) and Titanium oxide (TiO₂) films have attracted attention due to their higher dielectric constants, around 9 and 80, respectively. In this study, tetrakis(diethylamino)titanium (TDEAT) and trimethyl aluminum (TMA) were used for TiO₂ and Al₂O₃ film chemical vapor deposition (CVD). Oxygen was used as oxidant.  TMA has been widely studied for Al₂O₃ film deposition using H₂O as co-reactant. It is a good Al-containing precursor and its characteristics are well known. However the Al₂O₃ film properties using O₂ as co-reactant have not been studied much. TDEAT, as an amino-based titanium precursor for titanium oxides deposition, is also scarcely explored even though it has had a long history in the industry of TiN deposition. Amino-based metal precursors are very promising due to their high reactivity and less impurity incorporation. The addition of NH₃ as a catalyst has also been studied. Thin films of TiO₂ and Al₂O₃ were deposited on H-passivated Si(100) substrate through cycling of the source gases. The depositions were carried out in a low pressure chemical vapor deposition chamber. The reaction pressure was 0.7 torr and the reaction temperature was 100-300^oC. The film thickness was probed using spectroellipsometry. The surface morphology and roughness of both as-deposited and annealed films were analyzed with atomic force microscopy (AFM). Rutherford backscattering spectroscopy (RBS) was utilized for compositional analyses. Atomic compositions, interface reaction and annealing effects were also studied using x-ray photoelectron spectroscopy (XPS). It was found that the growth rate of both Al₂O₃ and TiO₂ films deposited using NH₃ is higher than that of films deposited without NH₃. AFM analysis reveals that the surface of Al₂O₃ films is much smoother than that of TiO₂ films. The image roughness of as-deposited Al₂O₃ is 0.1 nm while TiO₂ is 1 nm. Even though the roughness of TiO₂ is a few times higher than that of Al₂O₃, it is still better than that of TiO₂ deposited by titanium tetra-isopropoxide (TTIP). The roughness of both Al₂O₃ and TiO₂ films increases with deposition temperature and post-deposition annealing temperature. In the absence of NH₃, there is no detectable formation of SiO₂ in the as-deposited Al₂O₃ film, while a thin layer of silicon suboxide formed in the as-deposited TiO₂ film based on XPS analysis. With the addition of NH₃, both as-deposited Al₂O₃ and TiO₂ have no SiO₂ formation, which manifested itself only after annealing of the films. The carbon absence in the RBS analyses indicates that the carbon detected by XPS is surface contamination of the sample.