Yuniarto Widjaja1, Collin Mui2, Atashi Mukhopadhyay3, and Charles B. Musgrave2. (1) Silicon Storage Technology, 1171 Sonora Ct., Sunnyvale, CA 95086, (2) Stanford University, 380 Roth Way, Stanford, CA 94305-5025, (3) Chemical Engineering, Stanford University, 380 Roth Way, Stanford, CA 94305-5025
We have investigated the reactions of various organic and inorganic molecules on semiconductor and metal oxide surfaces and have identified dative bonding between Lewis acids and bases as a key process for many surface reactions. These Lewis acid-base complexes mediate various surface reaction mechanisms and lead to trapped intermediates which play a signficant role in the reaction kinetics of many processes. The author will provide various examples including self-assembling adsorption, reactions of amino acids on semiconductors and reaction of organo metalics on metal oxide surfaces.