Praveen Meduri, Chemical Engineering, The University of Louisville, 106 ERNST HALL, Louisville, KY 40217 and Mahendra K. Sunkara, Department of Chemical Engineering, University of Louisville, 106 Ernst Hall, Department of Chemical Engineering,, University of Louisville, Louisville, KY 40292.
Alloy nanowires are important in nanoscale device development as well as to study the carrier confinement effects. SiGe alloy nanowires were successfully synthesized using a low temperature vapor-liquid-solid method. The synthesized SiGe alloy nanowires were characterized for their diameter distribution and nucleation density using high resolution electron microscope observations. The compositions and crystallinity of the silicon and germanium were calculated using the data obtained from Raman spectra and X-ray diffraction analyses. The dependence of the synthesis power, temperature and pressure on the SiGe nanowires composition, growth rate, diameter and crystallinity were studied.