571a Electrodeposition of Bismuth Telluride Nanowires for Thermoelectric Applications: Synthesis, Characterization, and Properties

Raymond Scheffler1, Laura Q. Ye2, and Melanie McNeil1. (1) Department of Chemical and Materials Engineering, San Jose State University, San Jose, CA 95192, (2) NASA Ames Research Center, Moffett Field, CA 94035

Bismuth telluride (Bi2Te3) and its alloys have long been held as the best bulk commercial thermoelectric (TE) materials. In recent years, significant enhancement of TE figure of merit (ZT) of these traditional TE materials has been predicted through reduction of dimensions (i.e., nanostructures and nanoengineering). We are particularly interested in growing Bi2Te3 into nanowire structures and investigating electrolyte composition variations to form p-type and n-type nanowires with large ZT enhancement. We report here the electrochemical deposition of BixTey nanowires/nanorods of diameters of 35, 50, 75 and 200 nm and lengths up to 50 microns. While many papers in literature have reported on constant voltage electrochemical deposition of Bi2Te3 nanowires, we are able to obtain controlled, uniform growth of high quality p- and n-type nanowires through constant current deposition. A design of experimental matrix investigating the effects of current density and electrolyte pH values on the overall growth rate and nanowire crystalline quality has been performed. The effects of growth conditions on materials and structural characteristics of BixTey nanowires have been studied by SEM, High Resolution TEM, EDAX, and selected area electron diffraction patterns. The TE properties of individual BixTey nanowires are evaluated using micro/nano fabricated devices and UHV Scanning Thermoelectric Microscopy. TE nano cooler and nano power generator device prototypes based on BixTey nanowire arrays will be attempted.