In this paper we present our approach for integrating block copolymers into the lithographic process so as to enable molecular-level control over the dimensions and shapes of nanoscale patterned resist features and simultaneously retain essential process attributes such as pattern perfection, registration, and the ability to create non-regular device-oriented structures. Combining self-assembling materials with advanced lithographic tools may allow current manufacturing techniques to be extended to the scale of 10 nm and below and meet the long-term requirements detailed in the International Technology Roadmap for Semiconductors.