Zhen Wu1, Christiaan Richter2, and Latika Menon1. (1) Department of Physics, Northeastern University, 111 Dana Research Center, 110 Forsyth Street,, Boston, MA 02115-5026, (2) Department of Chemical Engineering, Northeastern University, 342 Snell Engineering Center, Boston, MA 02115-5000
Chemical vapor deposition (CVD) system was used to grow GaN nanowire based on the vapor-liquid-solid (VLS) mechanism. Nanoporous alumina templates and electron-beam lithography methods was used to pattern the substrate with the required catalyst necessary for the growth of the nanostructures. Optical and electrical properties study of GaN nanowire will be provided