Molecule-based electronics has emerged as a promising alternative to scaled CMOS technology and its eventual integration limit. Here we present an electronically configurable, molecule-based 160,000 Bit random access memory at a density of 10^11 Bits/cm^2. This number corresponds to the highest density among electrically addressable memory devices ever tested. The device is based on a cross-bar architecture in which bistable [2]rotaxane supramolecules are sandwiched between n-Si and metallic nanowire arrays of 34 nm pitch. A single bit addressability with decent On/Off current ratio was demonstrated in such small dimensions. The device fabrication and the testing procedure will be described.