Electronics and Photonics

Session 45 - Reaction Kinetics in Electronic Materials Processing
Bulk gas phase and liquid phase reactions, reactions in plasmas, and reactions occurring at gas-solid, solid-liquid and solid-solid interfaces are essential to the fabrication of modern electronic devices. This session is focused on topics related to the evaluation and control of reaction kinetics during the processing of electronic materials, including experimental evaluations and modeling and simulation efforts.
Chair:Katherine S. Ziemer
CoChair:Charles B. Musgrave
CoSponsor(s):Catalysis and Reaction Engineering Division
 Decomposition Kinetics of Dimethylcadmium by in-Situ Raman Spectroscopy and Quantum Chemical Calculations
Young Seok Kim, Tim Anderson
 Investigation of Cds Thin Film Deposition Kinetics Using a Continuous Flow Microreactor
Chih-hung Chang, Yu-Jen Chang, Doo-Hyoung Lee, S. O. Ryu, T. J. Lee
 Prediction of Reaction Kinetics in Ald of Metal Oxides and Nitrides
Ye Xu, Atashi Mukhopadhyay, Charles B. Musgrave
 Ab Initio Calculations of the Initial Reaction Mechanisms for Tio2 Atomic Layer Deposition Onto Sio2 Surfaces
Zheng Hu, Heath Turner
 Growth of Epitaxial Γ-Al2O3 Films on 4 H-Silicon Carbide
Carey M. Tanner, Jane P. Chang
 Controlling Ultrashallow Junction Formation through Surface Chemistry
Ramakrishnan Vaidyanathan, Charlotte Kwok, Edmund G. Seebauer

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