Dimosthenis Peftitsis
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Associate Professor in Power Electronics, |
About me
I received the Diploma degree (Hons.) in electrical and computer engineering from the Democritus University of Thrace, Xanthi, Greece, in 2008 and the Ph.D. degree from the KTH Royal Institute of Technology, Stockholm, Sweden, in 2013. In 2008, I was with the ABB Corporate Research, Västerås, Sweden, for six months. From 2013 to 2014, I was a Postdoctoral Researcher involved in the research on SiC converters at the Department of Electrical Energy Conversion, KTH Royal Institute of Technology. From 2014-2016, I was working as a Postdoctoral Fellow at the Lab for High Power Electronics Systems, ETH Zurich, where I was involved in dc-breakers for multiterminal HVDC systems. In May 2016, I joined the Norwegian University of Science and Technology in Trondheim, Norway, as an Associate Professor of power electronics at the Department of Electrical Power Engineering.
My current research interests are in the area of are in the area of WBG (e.g. SiC, GaN) power converters design for MVDC applications, gate and base driver designs for WBG devices, as well as dc-breaker design for MV and HVDC systems. In addition to these, Prof. Peftitsis’ research also focuses on reliability assessment and lifetime modelling of high-power semiconductor devices, including reliability of SiC power switches.
I am a Senior Member of IEEE and a member of the EPE International Scientific Committee and he serves as Associate Editor for IET Power Electronics and for the Journal of the European Power Electronics and Drives Association (EPE Journal). Since 2018 I have also been the chairman of the IEEE Power Electronics, Industry Applications, and Industrial Electronics Joint Societies Chapter.
Research
My research interests include
Silicon Carbide converters
DC circuit breakers
Gallium Nitride converters
MVDC converters
High-efficiency subsea electrification
Reliability of Silicon and SiC power semiconductor devices
Publications in peer-reviewed journal
M. Zdanowski, D. Peftitsis, S. Piasecki and J. Rabkowski, “On the design process of a 6 kVA quasi-Zinverter employing SiC power devices”, IEEE Trans. Power Electron., vol. 31, no. 11, pp. 7499-7508, Nov 2016.
D. Peftitsis and J. Rabkowski, “Gate and Base Drivers for Silicon Carbide Power Transistors: An Overview”, IEEE Trans. Power Electron., vol. 31, no. 10, pp. 7194-7213, Oct 2016.
D. Sadik, J. Colmenares, G. Tolstoy, D. Peftitsis, J. Rabkowski, M. Bakowski and H.-P. Nee, “Short- Circuit Protection Circuits for Silicon Carbide Power Transistors”, IEEE Trans. Ind. Electron., vol. 63, no. 4, pp. 1995-2004, Apr. 2016.
J. Colmenares, D. Peftitsis, J. Rabkowski, D. Sadik, G. Tolstoy and H.-P. Nee, “High-Efficiency Three-Phase Inverter with SiC MOSFET Power Modules for Motor{Drive Applications”, IEEE Trans. Ind. Appl., vol. 51, no. 6, pp. 4664-4676, Nov.-Dec. 2015.
D. Peftitsis, J. Rabkowski, and H.-P. Nee, “Self-Powered Gate Driver for Normally-ON SiC JFETs: Design Considerations and System Limitations”, IEEE Power Electron. Letters, vol. 29, no. 10, pp. 5129-5135, Oct. 2014.
J. Rabkowski, D. Peftitsis and H.-P. Nee, “Parallel-operation of Discrete SiC BJTs in a 6 kW 250 kHz dc/dc Boost Converter”, IEEE Trans. Power Electron., vol. 29, no. 5, pp. 2482-2491, May 2014.
J-K. Lim, D. Peftitsis, J. Rabkowski, M. Bakowski and H.-P. Nee, “Analysis and Experimental Verification of the In uence of Fabrication Process Tolerances and Circuit Parasitics on Transient Current Sharing of Parallel-Connected SiC JFETs”, IEEE Trans. Power Electron., vol. 29, no. 5, pp. 2180-2191, May 2014.
J. Colmenares, D. Peftitsis, J. Rabkowski, D. Sadik and H.-P. Nee, “Dual-Function Gate Driver for a Power Module with SiC Junction Field-E ect Transistors”, IEEE Trans. Power Electron., vol. 29, no. 5, pp. 2367-2379, May 2014.
G. Tolstoy, D. Peftitsis, J. Rabkowski, H.-P. Nee and P. Palmer, “A Discritized Proportional Base Driver for Silicon Carbide Bipolar Junction Transistors”, IEEE Trans. Power Electron., vol. 29, no. 5, pp. 2408-2417, May 2014.
P. Ranstad, H.-P. Nee, J. Linner, and D. Peftitsis, “An experimental evaluation of SiC switches in soft-switching converters ”, IEEE Trans. Power Electron., vol. 29, no. 5, pp. 2527-2538, May 2014.
J. Rabkowski, D. Peftitsis and H.-P. Nee, “Design Steps Towards a 40-kVA SiC JFET Inverter With Natural-Convection Cooling and an Efficiency Exceeding 99.5%”, IEEE Trans. Ind. Appl., vol. 49, no. 4, pp. 1589-1598, Jul.-Aug. 2013.
D. Peftitsis, J. Rabkowski, and H.-P. Nee, “Self-Powered Gate Driver for Normally ON Silicon Carbide Junction Field-E ect Transistors Without External Power Supply”, IEEE Trans. Power Electron., vol. 28, no. 3, pp. 1488-1501, Mar. 2013.
D. Peftitsis, R. Baburske, J. Rabkowski, J. Lutz, G. Tolstoy, and H.-P. Nee, “Challenges Regarding Parallel Connection of SiC JFETs”, IEEE Trans. Power Electron., vol. 28, no. 3, pp. 1449-1463, Mar. 2013.
J. Rabkowski, D. Peftitsis, and H.-P. Nee, “Silicon carbide power transistors-A new era in power electronics is initiated”, IEEE Ind. Electron. Mag., vol. 6, no. 2, pp. 17-26, Jun. 2012.
J. Rabkowski, G. Tolstoy, D. Peftitsis and H.-P. Nee, “Low-loss high-performance base-drive unit for SiC BJTs”, IEEE Trans. Power Electron., vol. 27, no. 5, pp. 2633-2643, May 2012.
D. Peftitsis, G. Tolstoy, A. Antonopoulos, J. Rabkowski, J.-K. Lim, M. Bakowski, L. Angquist, and H.-P. Nee, “High-power modular multilevel converters with SiC JFETs”, IEEE Trans. Power Electron., vol. 27, no. 1, pp. 28-36, Jan. 2012.